Fabrication of polymer optical waveguides for the 1.5-m band using focused proton beam

Miura, Kenta*; Machida, Yuki*; Uehara, Masato*; Kiryu, Hiromu*; Ozawa, Yusuke*; Sasaki, Tomoyuki*; Hanaizumi, Osamu*; Sato, Takahiro; Ishii, Yasuyuki; Koka, Masashi; et al.

Key Engineering Materials, 497, p.147 - 150, 2012/00

https://doi.org/10.4028/www.scientific.net/KEM.497.147

Fabrication and evaluation of light-emitting SiO substrate co-implanted with Si and C ions

Kikuchi, Shusuke*; Umenyi, A. V.*; Inada, Kazuki*; Kawashima, Akihiro*; Noguchi, Katsuya*; Sasaki, Tomoyuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; et al.

no journal, , 

Light emission around a wavelength () of 500 nm from SiO substrates implanted with Si and C ions and annealed at 1100C has been reported. In this report, we investigated photoluminescence (PL) properties of SiO substrates implanted with Si and C ions and annealed at the lower temperature of 700C. PL peaks by Si-ion implantation were observed around = 650 nm, and PL peaks by C-ion implantation were observed around = 450 nm from SiO substrates annealed at 700C. The PL peak wavelength became shorter by increasing the ratio of C to Si ions. Consequently, it was confirmed that it is possible to control the emission wavelength by the ratio of C to Si ions. Our samples showed typical light-emission though the annealing temperature was lower than the temperature reported by other groups.